Physics Seminar: Bragg reflector-induced increased self-absorption of emitted photons in optically-thin GaAs/AlGaAs double heterostructures
The Physics Department and Center for Theoretical Physics will be having a seminar Thursday, October 26 at 12:00 pm in Namm Room 823. Faculty and students are welcome. Light refreshments will be served.
Dr. Patrick Folkes
Army Research Laboratory
Adelphi, MD, USA
Time-resolved photoluminescence measurements on a set of molecular beam epitaxy (MBE)-grown GaAs/AlGaAs double heterostructures (DHs) are used to determine that a distributed Bragg reflector between the substrate and the DH significantly increases the self-absorption of emitted photons in optically-thin DHs whose thickness is comparable to or less than the wavelength of the emitted light at the GaAs bandedge. The Bragg reflector-induced increased self-absorption of emitted photons in optically thin DHs can be attributed to multiple reflections of emitted photons from the Bragg reflector and the air/semiconductor interface.