Faculty Commons, A Center for Teaching, Learning, Scholarship and Service coordinates all professional development, grants and assessment activities of faculty at New York City College of Technology. Faculty Commons adopts a programmatic approach to professional development and operates as a faculty resource and think tank where members collaborate on a variety of projects to shape curriculum, pedagogy and assessment.
The Office of Sponsored Programs (OSP) helps faculty and administrators compete for and win grants that strengthen the intellectual climate and improve the learning environment at City Tech. The office provides notices of grant opportunities and works with faculty and administrators over the life-cycle of a grant – from concept development through close-out.
The Professional Activity Report and Self-Evaluation (PARSE) is the documentation of a faculty member’s accomplishments during each academic year and cumulatively, in the three principal areas of teaching, scholarly and professional growth, and service. The PARSE serves as the basis for the annual evaluation. It is also provides faculty with an instrument to present to departmental and college review committees for reappointment, tenure, and promotion.
The Physics Department and Center for Theoretical Physics will be having a seminar Thursday, October 18 at 12:00 pm in Namm Room 823. Faculty and students are welcome.
Superconducting proximity effect in two-dimensional semiconductor-superconductor structures
Progress in the emergent field of topological superconductivity relies on the synthesis of new material combining superconductivity, low density, and spin-orbit coupling (SOC). Theory indicates that the interface between a one-dimensional semiconductor with strong SOC and a superconductor hosts Majorana-modes with nontrivial topological properties. We discuss the recent developments in the epitaxial growth of Al on InAs nanowires was shown to yield a high-quality superconductor-semiconductor system with uniformly transparent interfaces and a hard induced gap, indicted by strongly suppressed subgap tunneling conductance. We have developed a two-dimensional (2D) surface InAs quantum wells with epitaxial superconducting Aluminum, yielding a planar system with structural and transport characteristics as good as the epitaxial nanowires. The realization of 2D epitaxial superconductor-semiconductor systems represents a significant advance over wires, allowing extended networks via top-down processing. We present our recent developments in materials synthesis and growth of these density-controlled surface 2D electron-gases and demonstrate Josephson junctions with highly transparent contacts. These developments have to lead to unprecedented control over proximity effect in semiconductors where electron densities can be tuned using a gate voltage. We discuss potential applications of this new material system that can serve as a platform for low power circuits, gate-based qubits as well as exploring topological superconductivity for computation.